dc.contributor.author |
Borra, Venkata |
en_US |
dc.date.accessioned |
2014-10-27T15:12:34Z |
|
dc.date.accessioned |
2019-09-08T02:51:19Z |
|
dc.date.available |
2014-10-27T15:12:34Z |
|
dc.date.available |
2019-09-08T02:51:19Z |
|
dc.date.issued |
2014 |
|
dc.identifier |
892917952 |
en_US |
dc.identifier.other |
b21475684 |
en_US |
dc.identifier.uri |
http://hdl.handle.net/1989/11393 |
|
dc.description |
x, 66 leaves : illustrations ; 29 cm. |
en_US |
dc.description.abstract |
The LEVEL-3 power MOSFET SPICE model (IRF034) is used to design and model the LED driver. Three LED drivers are designed and their efficiency values are compared for picking the optimum driver among them. The switching frequency of 20 kHz to 40 kHz to the MOSFET indeed produce sharp current spikes across the MOSFET which are at least 30-40 times more than the desired value around 2A. To resolve this problem an efficient turn-on Snubber circuit is designed for the driver for safe operation. The efficiency of the LED driver is enhanced by modeling the LED's PSpice model and reconfiguring the circuit elements. The simulation results of the designed driver propose an efficiency value of 92.2%. The efficiency is calculated to be 88% when the designed model is replaced by a commercial LED model. |
en_US |
dc.description.statementofresponsibility |
by Venkata Shesha Vamsi Borra. |
en_US |
dc.language.iso |
en_US |
en_US |
dc.relation.ispartofseries |
Master's Theses no. 1448 |
en_US |
dc.subject.lcsh |
Light emitting diodes. |
en_US |
dc.subject.lcsh |
Metal oxide semiconductor field-effect transistors. |
en_US |
dc.subject.lcsh |
Pulse-duration modulation. |
en_US |
dc.subject.lcsh |
Electric lighting--Control. |
en_US |
dc.title |
Design and modeling of high performance LED dimming driver with reduced current spikes using turn-on snubber across power MOSFET |
en_US |
dc.type |
Thesis |
en_US |