dc.contributor.author |
Barlow, Mark D. |
en_US |
dc.contributor.author |
Youngstown State University. Dept. of Electrical and Computer Engineering. |
en_US |
dc.date.accessioned |
2011-01-31T14:20:30Z |
|
dc.date.accessioned |
2019-09-08T02:35:44Z |
|
dc.date.available |
2011-01-31T14:20:30Z |
|
dc.date.available |
2019-09-08T02:35:44Z |
|
dc.date.created |
2007 |
en_US |
dc.date.issued |
2007 |
en_US |
dc.identifier.other |
b20227097 |
en_US |
dc.identifier.uri |
http://rave.ohiolink.edu/etdc/view?acc_num=ysu1198114671 |
en_US |
dc.identifier.uri |
http://jupiter.ysu.edu/record=b2022709 |
en_US |
dc.identifier.uri |
http://hdl.handle.net/1989/6334 |
|
dc.description |
ix, 88 leaves : ill. ; 29 cm. |
en_US |
dc.description |
Thesis (M.S. )--Youngstown State University, 2007. |
en_US |
dc.description |
Includes bibliographical references (leaves 68-69). |
en_US |
dc.description.abstract |
This research demonstrates several methods to produce high voltage Schottky
contact diodes. How contact construction and process temperatures affect turn-on voltage
Schottky barrier height, on-resistance, and reverse breakdown voltage are studied.
The performance of varied contact terminal construction types and temperature processes
used to fabricate Schottky diodes were evaluated. The diodes are constructed of nickel
metal mechanical (pressure) contacts and plasma sputter deposited nickel metal contacts
on silicon carbide (SiC). Current-voltage characterizations were used to study the
differences in performance verses geometric construction types, sputter deposition
temperature, and annealing temperatures. The configurations studied were needle points,
spheres, and planar metal-semiconductor contacts varying in interface areas that ranged
from 0.58×10-4 to 6.2×10-4 cm ². Planar Schottky contacts 500 μm in diameter sputter
deposited at 27°C and 600°C are exposed to a range of temperatures in ultra pure
nitrogen atmosphere. These Schottky contacts were studied to gain insight into
mechanical contacts, plasma sputter deposited contacts, and temperature processes. |
en_US |
dc.description.statementofresponsibility |
by Mark D. Barlow. |
en_US |
dc.language.iso |
en_US |
en_US |
dc.relation.ispartofseries |
Master's Theses no. 0969 |
en_US |
dc.subject.classification |
Master's Theses no. 0969 |
en_US |
dc.subject.lcsh |
Diodes, Schottky-barrier--Design and construction. |
en_US |
dc.title |
Metal-semiconductor contacts for schottky diode fabrication / |
en_US |
dc.type |
Thesis |
en_US |